METHOD AND APPARATUS FOR CONTROLLING INSULATED-GATE BIPOLAR OR FIELD-EFFECT TRANSISTOR GATES (VERSIONS) Russian patent published in 2014 - IPC H01L27/14 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to power electronics, particularly to methods and apparatus for controlling insulated-gate bipolar or field-effect transistor gates. The method of controlling insulated-gate bipolar or field-effect transistor gates via combined transmission of control information and gate control energy between a source and a receiver of control information and transistor gate control energy involves setting up a wireless energy transmitting channel in an electrically insulating medium of a light-conducting rod by placing a high-power LED at one end of the rod and a matrix solar cell at the other end of the rod; exciting light flux using the LED in the direction towards the matrix solar cell; converting the energy of the light flux in the matrix solar cell to electric-current energy which is used to power the transistor gate, wherein the control information is encoded by varying the on and off time of the LED.

EFFECT: method and apparatus for controlling insulated-gate bipolar or field-effect transistor gates which provide high stability and reliability of the gate control process, high electric strength of galvanic isolation of the control device and power elements of the transistors, preventing generation of electrical noise in the control device from currents in output circuits of the controlled transistors.

6 cl, 4 dwg