METHOD OF INCREASE OF THRESHOLD BARRIER VOLTAGE OF GAN TRANSISTOR Russian patent published in 2018 - IPC H01L21/335 

FIELD: electricity.

SUBSTANCE: method of increasing the threshold barrier voltage of a transistor based on gallium nitride (GaN), which includes creating gate p-GaN mesa on the surface of the silicon wafer with epitaxial heterostructure of GaN/AlGaN/GaN type, inter-instrument mesa-isolation, forming ohmic contacts to the areas of the transistor drain and source, forming a two-layer resistive mask by lithographic methods, cleaning of the surface of the semiconductor, deposition of thin films of gate metallization, removing of the plate from the vacuum chamber of the evaporator, removal of the resistive mask, prior to the evaporation of thin films of gate metallization the plate is subjected to treatment in an atmosphere of atomic hydrogen for t=10-60 seconds at a temperature of t=20-150°C and flow density of hydrogen atoms on the surface of the plate, equal to 10¹³-10¹⁶ at. cm^-2 c^-1.

EFFECT: increase in the threshold barrier voltage of the GaN transistor when applying barrier metal films to the p-GaN gate area with a high electronic work function.

5 cl, 3 dwg