FIELD: technological processes.
SUBSTANCE: invention relates to the formation technology of ohmic contacts to AlGaN/GaN heterostructures and can be used in the manufacture of semiconductor devices, in particular microwave field effect transistors. After the growth of a high-alloy semiconductor material (n+GaN), which is in contact with a two-dimensional electron gas of the AlGaN/GaN heterostructure, and stripping a dielectric mask, high-temperature annealing of the heterostructure with a high-alloyed semiconductor material at a temperature of 600–650 °C for 10–15 minutes in a nitrogen medium.
EFFECT: decrease in the resistivity of ohmic contacts.
1 cl, 1 dwg
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