METHOD OF DETECTION OF STRUCTURAL DEFECTS IN SILICON CRYSTALS Russian patent published in 1998 - IPC

FIELD: semiconductor technology. SUBSTANCE: for detection of structural defects in crystals crystal surface is irradiated with flux of alpha particles from radionuclide source with dose (1,2-7,2)•10¹²cm^-2, then surface is subjected to chemical etching in solution that acts selectively on defects and finally detected defects are fixed in ring area embracing irradiation zone. EFFECT: enhanced authenticity of method. 1 tbl