COMPOSITION OF SELECTIVE THINNER FOR TELLURID OF CADMIUM-MERCURY Russian patent published in 2017 - IPC C23F1/30 H01L21/306

Abstract RU 2619423 C1

FIELD: chemistry.

SUBSTANCE: composition for selective etching of cadmium-mercuric telluride contains the ingredients in the following ratio, in volume fractions: 25% aqueous solution of chromium oxide (VI) (CrO₃) - 24, concentrated hydrochloric acid (HCl) -1, 5% solution of citric acid - 8.

EFFECT: selective etching of cadmium-mercuric telluride with the formation of triangular etch pits.

2 dwg

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RU 2 619 423 C1

Authors

Kashuba Aleksej Sergeevich

Permikina Elena Vyacheslavovna

Petrova Polina Romanovna

Dates

2017-05-15—Published

2016-06-06—Filed