METHOD OF MANUFACTURING THIN FILM CHIP OF RESISTANT HIGH-FREQUENCY ATTENUATOR Russian patent published in 2018 - IPC H01C17/06 

Abstract RU 2645810 C1

FIELD: electricity.

SUBSTANCE: method of manufacture includes forming on the front side of the substrate resistive layer by spraying with subsequent photolithography, fitting the resistance of resistors to the specified denomination, forming a protective layer, spraying metallization on the back side of the substrate, separating the substrate on strips, forming a face contacts after thin-film technology, applying solder, separating the chips, formation of face contacts after thin-film technology is performed by spraying contact material (e.g. vanadium-copper-nickel) on the back side of the chip and chip end, back side of chip at the junction with the face of chip is positioned to stream of sprayed material at an angle less than 90° (optimum angle 60-75°). Then spraying the contact material on the front side of the chip and chip face, front side of chip at the junction with the chip face is positioned to stream of sprayed material at an angle less than 90°, after which solder is deposited on bond pads.

EFFECT: reduce the time of deposition of films and the laboriousness of the process.

4 cl, 3 dwg

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RU 2 645 810 C1

Authors

Korzh Ivan Aleksandrovich

Kuznetsov Aleksandr Nikolaevich

Dates

2018-03-01Published

2016-10-18Filed