FIELD: radio engineering, communication.
SUBSTANCE: resistive HF-attenuator consists of a ceramic plate and resistive and electrically conductive layers applied on it, a resistive layer is made on the ceramic plate first, wherein an electrically conductive layer made in the form of narrow contact pads is located on it, the third one is a dielectric layer with windows located in places of narrow contact pads, the fourth one is an electrically conductive layer which connects with narrow contact pads of the second layer via windows and is made in the form of contact pads of increased area.
EFFECT: increasing the dissipated power and simplifying the technology of manufacturing a resistive HF-attenuator.
1 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF MANUFACTURING THIN FILM CHIP OF RESISTANT HIGH-FREQUENCY ATTENUATOR | 2016 |
|
RU2645810C1 |
POWERFUL MICROWAVE ATTENUATOR | 2021 |
|
RU2758083C1 |
ENERGY PYROTECHNIC IGNITER | 2024 |
|
RU2830462C1 |
MANUFACTURE METHOD OF THIN-FILM CHIP RESISTORS | 2016 |
|
RU2628111C1 |
LIGHT-EMITTING SEMICONDUCTOR MODULE | 2006 |
|
RU2321103C1 |
METHOD OF MANUFACTURING DIODE WITH TERAHERTZ RANGE WHISKER | 2016 |
|
RU2635853C2 |
METHOD OF ASSEMBLING THREE-DIMENSIONAL ELECTRONIC MODULE | 2012 |
|
RU2492549C1 |
MICROWAVE INTEGRATED CIRCUIT | 2020 |
|
RU2803110C2 |
HIGH-POWER HYBRID INTEGRATED CIRCUIT OF SHF RANGE | 1996 |
|
RU2161346C2 |
CONTACT ASSEMBLY ON OPPOSITE CONTACTS WITH CAPILLARY CONNECTION ELEMENT, AND MANUFACTURING METHOD THEREOF | 2008 |
|
RU2374793C2 |
Authors
Dates
2017-12-14—Published
2015-11-25—Filed