FIELD: chemistry.
SUBSTANCE: invention relates to the field of inorganic chemistry, specifically to the creation of new composite materials consisting of an aluminum antimonide semiconductor and a manganese antimonide ferromagnet, which can be used to create magnetically sensitive diode structures, magnetic switches and magnetic field sensors based on a ferromagnetic composite. Method for producing an AlSb-MnSb ferromagnetic composite is proposed, which consists in alternately applying thin films of manganese, antimony and aluminum in their stoichiometric ratios to a dielectric substrate, while the antimony film is applied between manganese and aluminum, further, the obtained heterostructure is subjected to heat treatment in an oxygen-free environment at a temperature of 400 to 450 °C for 2–4 hours prior to the formation of a two-phase composite MnSb-AlSb film. Deposition of thin films of metals on the substrate is carried out by vacuum-thermal spraying. Silicon or sapphire is used as the dielectric substrate. Thermal treatment of the obtained heterostructure is carried out in a vacuum or in an inert medium.
EFFECT: proposed method makes it possible to obtain a composite based on aluminum antimonide with manganese antimonide, suitable for creating a ferromagnetic material with high Curie temperature values and with the properties of a wide-gap semiconductor.
4 cl, 2 dwg
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Authors
Dates
2018-03-29—Published
2017-02-28—Filed