FIELD: manufacturing technology.
SUBSTANCE: invention relates to a method for producing films with ferromagnetic clusters Mn5Ge3Ox in the GeO matrix at low temperatures. Resulting Mn5Ge3Ox phase can be used as spintronics elements. Method comprises preparing a substrate, applying a layer of germanium-containing material and a manganese layer on it, and then annealing the resulting two-layer sample. As a germanium-containing substance, a layer of germanium monoxide is thermally deposited on the substrate. Prior to the deposition of the manganese layer, the substrate with a layer of germanium monoxide applied is cooled to room temperature. Annealing of the obtained sample is carried out at a temperature of 300 °C.
EFFECT: reduction in the number of process cycles and requirements for vacuum ambient due to a decrease in the Mn5Ge3Ox formation temperature (Nowotny phase) to 300 °C, while achieving high magnetic characteristics: Ms=600 emu/cm3, Tc=420 K, which leads to an increase in the functionality of Mn5Ge3Ox-GeO2 film samples.
1 cl, 1 dwg
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Authors
Dates
2018-05-28—Published
2017-05-22—Filed