FIELD: physics.
SUBSTANCE: invention relates to the field of materials for use in magnetosensor and magnetometric devices, information recording and reading devices. Multilayer magnetoresistive nanowires consist of alternating ferromagnetic and copper layers, nickel-iron layers with thicknesses of 10-30 nm are used as ferromagnetic layers, and the thickness of copper layers is 2-5 nm and the total number of pairs of layers is from 100 to 10 000.
EFFECT: technical result is the production of multilayer magnetoresistive NiFe/Cu nanowires with the GMR coefficients of -18,4…-19,2% and the magnitude of the saturation field of the GMR effect of 0,001-0,0015 T.
1 cl, 3 ex, 3 dwg
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