FIELD-EFFECT TRANSISTOR ON HETEROSTRUCTURE Russian patent published in 1997 - IPC

FIELD: electronic engineering. SUBSTANCE: transistor has part to semiconductor material layer placed at distance greater than 30 nm from gate whose dope concentration is higher than 3·10¹⁷cm^-3 and surface area of this dope is greater than 10¹²cm^-2; semiconductor material layer between mentioned part and gate has mean dope concentration ≅3·10¹⁷cm^-3. EFFECT: improved linear characteristics of device built around these transistors and reduced modulation noise of such devices. 5 dwg