FIELD-EFFECT TRANSISTOR Russian patent published in 1998 - IPC

FIELD: Fermi field-effect transistors. SUBSTANCE: transistor is characterized in that charge carriers can move inside channel at definite depth in substrate under gate in which case there is no need to produce inversion layer at semiconductor surface. For producing low-capacitance Fermi transistor it will be good practice to use Fermi pocket of definite depth whose polarity of conductivity is reverse to that of substrate and unidirectional with diffusion regions where drain and source are formed. EFFECT: improved design, reduced diffusion capacitance and gate capacitance. 12 cl, 29 dwg