METHOD OF AUTOMATED DETERMINATION OF THERMAL RESISTANCE TRANSITION - BODY OF PACKED POWER SEMICONDUCTOR DEVICES Russian patent published in 2018 - IPC G01R31/26 

Abstract RU 2653962 C1

FIELD: measuring equipment.

SUBSTANCE: use for measuring the thermal parameters of packed power semiconductor devices. Essence of the invention consists in the fact that the method of automated determination of the thermal resistance of a transition-case of packed semiconductor power devices to improve the speed of measurements and to ensure 100 % control of thermal resistance in all SPDs, connect each SPD under rated voltage, current and switching frequency for a period of time equal to 0.02…0.05 time constant of the thermal process of the device t=0.02…0.05 τ, then turn off, measure the temperature-sensitive parameter and compare it with the reference one.

EFFECT: providing the ability to quickly determine the thermal resistance of the transition-housing diodes, thyristors and transistors, a simpler implementation of the tester.

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RU 2 653 962 C1

Authors

Potapov Leonid Alekseevich

Dates

2018-05-15Published

2017-03-31Filed