METHOD FOR DETERMINATION OF THERMAL RESISTANCE FOR JUNCTION FIELD-EFFECT TRANSISTORS Russian patent published in 2014 - IPC G01R31/26 

Abstract RU 2516609 C2

FIELD: electricity.

SUBSTANCE: device is heated by passing through it of free-form current in the open state. In the process of heating the passage of the heating current is interrupted at certain moment of time and by passing the measuring current through the device values of the heat-sensitive parameter and the case temperature are measured and recorded. Periodically values of the heating current and resultant voltage drops in the device are measured and recorded. The average power liberated by the device within the period of time is calculated. Since the time moment till the time moment the calculated average power of losses at nth interval of measurement is compared with the preset maximum permitted dissipated power for the device. When the value is less, equal or more than PMAX, the average value of the heating current is remained unchanged or decreased respectively. When the temperature of the device case reaches the preset maximum, passage of the heating current is interrupted. The measuring current is passed through the device, the heat-sensitive parameter is measured and recorded. In the mode of natural cooling, at the moment of thermodynamic equilibrium reaching, values of the heat-sensitive parameter and temperature of the device case are measured and recorded. Thermal and transient thermal resistance is calculated for the case-junction.

EFFECT: improvement of accuracy, reduction of the consumed time.

1 dwg

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RU 2 516 609 C2

Authors

Bespalov Nikolaj Nikolaevich

Lysenkov Aleksej Evgen'Evich

Dates

2014-05-20Published

2012-09-10Filed