METHOD OF DETERMINATION OF TRANSIENT THERMAL RESISTANCE OF CRYSTAL-HOUSING AND THERMAL RESISTANCE OF CRYSTAL-HOUSING IN THE STATE OF HEAT EQUILIBRIUM OF TRANSISTORS WITH FIELD CONTROL Russian patent published in 2019 - IPC G01R31/26 G01N25/18 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement of thermal parameters of power electronics components and can be used to determine transient thermal resistance of crystal-housing Z_ThJC (t) and heat resistance of crystal-housing in state of thermal equilibrium of R_ThJC transistors with field control, in particular, bipolar transistors with insulated gate (IGBT) and field-effect transistors with isolated gate (MOSFET) to control their quality. According to the disclosed method, the tested transistor is heated by direct current with the condition that a known constant power is detected in the transistor structure. On the heating interval, temperature dependences of the housing and the temperature sensitive parameter are obtained from the heating time, wherein the temperature sensitive parameter is voltage at the gate of the tested transistor. Heating is stopped when the preset temperature of the housing is reached. After a time interval of at least 2τ, where τ is a crystal-housing thermal constant value, at the natural cooling interval, periodic measuring pulses of electric current are periodically transmitted through the structure of the transistor under the condition that constant power is selected in the transistor structure, which is equal to the constant power value allocated in the transistor structure on the heating interval, duration and porosity of which minimally affect thermal processes. During each measurement pulse of electric current simultaneous measurement and storage of housing temperature and temperature-sensitive parameter. Method includes finding function of interrelation of crystal temperature and temperature-sensitive parameter and calculating transient thermal resistance of chip-housing Z_ThJC(t), determining the thermal resistance of the crystal-housing in the thermal equilibrium state R_ThJC of the tested transistor equal to the value Z_ThJC(t) at the constant section.

EFFECT: high accuracy of determining transient thermal resistance of the crystal-housing Z_ThJC(t) and thermal resistance of the crystal-housing in a state of thermal equilibrium of R_ThJC transistors with field control.

1 cl, 2 dwg