METHOD FOR ORIENTED MODIFICATION OF SEMICONDUCTOR DEVICE STRUCTURES USING PULSE ELECTROMAGNETIC FIELD Russian patent published in 2015 - IPC H01L21/66 

FIELD: electricity.

SUBSTANCE: method includes the determination of criterial parameters for devices, radiation in a passive mode of a limited survey sample of single-type semiconductor devices by a weak pulse electromagnetic field (PEMF) with variable parameters, including the pulse amplitude, its duration and repetition rate, processing of experiment data by statistic methods by comparing the criterial parameters of the semiconductor devices before and upon radiation by PEMF, in accordance with its results a positive effect of modification is detected and repeated radiation is performed for the untreated semiconductor device structures at PEMF generation modes optimal for the respective type of the device structures. At that the value of an integral parameter being the amplification coefficient is selected as the criterial parameter in the circuit with a common emitter of a bipolar transistor h_21E, while comparison of measurement results is made using a double-connected confidence S-interval, and according to the comparison results a conclusion is made about the influence degree of PEMF.

EFFECT: improved accuracy in the quantitative assessment of oriented modification of the semiconductor device structures using PEMF.

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