SEMICONDUCTOR RESISTIVE SENSORS MANUFACTURING METHOD FOR THE OZONE IN THE AIR CONTENT MEASUREMENTS Russian patent published in 2018 - IPC G01N27/12 

FIELD: measuring equipment.

SUBSTANCE: invention can be used in analytical chemistry, in environmental monitoring, for the populated areas air environment monitoring, in atmospheric monitoring, for the ozone concentration in technological processes monitoring, scientific research, including in the field of atmospheric chemistry. Ozone in air measuring semiconductor resistive sensors manufacturing method is that metal oxide semiconductor films are applied onto heated dielectric substrates and forming the sensitive layer by experimentally established multi-stage annealing modes with the metal oxide film resistance continuous measurement, at that, for the ozone in the air concentrations measurements in the range from 0.3 to 30 mcg/m³ using the In₂O₃ with Fe₂O₃ based metal oxide films, at that, selecting the sensitive layer formation mode, when the film is heated in inert gas at a rate of not less than 3 and not more than 10°C/min up to temperatures of 500–600 °C, cooled down to the room temperature, and then heated in the air at a rate of not less than 3 and not more than 10 °C/min to temperatures of 500–650 °C, then cooled down.

EFFECT: invention provides the resistive semiconductor sensors measurements required sensitivity and accuracy for low and ultra low ozone in air concentrations of 0,3–30 mcg/m³ and ozone measurements in the indicated range with high resolution.

1 cl, 6 dwg. 1 tbl, 10 ex