SEMICONDUCTOR RESISTIVE SENSORS MANUFACTURING METHOD FOR THE OZONE IN THE AIR CONTENT MEASUREMENTS Russian patent published in 2018 - IPC G01N27/12 

FIELD: measuring equipment.

SUBSTANCE: invention can be used in analytical chemistry for the ozone in technological processes concentration monitoring, environmental monitoring, working areas air environment monitoring, atmospheric monitoring, in scientific research, including in the field of atmospheric chemistry. Ozone in air measuring semiconductor resistive sensors manufacturing method is that metal oxide semiconductor films are applied onto heated dielectric substrates and forming the sensitive layer by experimentally established multi-stage annealing modes with the metal oxide film resistance continuous measurement, at that, for the ozone in the air concentrations measurements in the range from 50 to 400 mcg/m³ using the In₂O₃ with Fe₂O₃ based metal oxide films, at that, selecting the sensitive layer formation mode, when the film is heated in air at a rate of not less than 8.5 and not more than 13 °C/min up to temperatures of 460–650 °C, and then holding at these temperatures for not less than 0.5 h.

EFFECT: invention provides increase in resolving power and accuracy of measurements by resistive semiconductor sensors at elevated ozone concentrations (above 50 mcg/m³).

1 cl, 4 dwg, 1 tbl, 9 ex