METHOD FOR PREPARATION OF PHOTOELECTRIC TRANSDUCER Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: in process of photoelectric transducer creation to solve problem of technology simplification, dielectric coating (1) is applied on front surface of substrate (2) n-type GaSb, then a layer of photoresist is applied, mask is created, and dielectric coat is etched via mask on light-sensitive sections of substrate (2). Mask of photoresist (4) is created on front surface of substrate for creation of subcontact areas, anode oxidation of these areas is carried out (3) to prepare layer of anode oxide with thickness of not more than 0.25 mcm, in electrolyte that does not enter into chemical reaction with photoresist, and photoresist (4) is removed. Then diffusion of Zn is carried out from gas phase (6) into substrate (2) in hydrogen atmosphere. P-layer (5) is removed on back surface of substrate (2), and layer of metal is applied on it to create back electric contacts (7). Metal is applied on front surface of substrate via mask from photoresist to create front electric contacts (8) on it with further removal of photoresist.

EFFECT: invention may be used for creation of narrow-band phototransducers on the basis of gallium antimonide, which are part of cascade solar cells and thermal phototransducers applied in systems of autonomous power supply.

1 ex, 8 dwg