FIELD: microelectronics. SUBSTANCE: invention deals with selection of electron articles by preset levels of stability and reliability. Procedure includes formation of representative " instructive " sample per each type of selection from tested lot of articles, its irradiation by small doze causing significant change of two parameters as minimum specified in advance in specifications or additional ones, distribution of articles of sample by degree of change of parameters caused by irradiation, firing of articles to restore parameters and testing sample for radiation stability till 50% of failures are achieved in case of inspection of tested lot for radiation stability, test of sample for median resource or in the course of mean-time- between-failures or in the course of time necessary to determine required resource in case of inspection of tested lot for reliability, test of sample for reliability under combined action of radiation, heat and electric loads till 50% of failures are obtained in case of inspection of tested lot by levels of mean-time-between-failures under conditions of combined action of destabilizing factors. Procedure provides for selection of most radiation-proof and reliable devices with guaranteed indices of stability and reliability which are 1.5-2.0 times higher than average mean-time- between-failures and by half-order or order of magnitude greater than average indices of stability. EFFECT: procedure is highly adaptable for employment, does not require great expenses and does not deteriorate operational characteristics of articles. 11 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF REJECTING SEMICONDUCTOR DEVICES FOR RADIATION RESISTANCE | 2003 |
|
RU2253875C2 |
METHOD OF SELECTING INTEGRAL MICROCIRCUITS FOR RADIATION STABILITY AND RELIABILITY | 2003 |
|
RU2254587C1 |
METHOD OF OBTAINING GROUP OF ELECTRO-TECHNICAL EQUIPMENT, UNIFORM IN TERMS OF RADIATION RESISTANCE | 2018 |
|
RU2708815C1 |
METHOD FOR SELECTION OF RADIATION-PROOF ELECTRONIC DEVICES | 1992 |
|
RU2066869C1 |
METHOD TO REJECT CMOS MICROCHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES, BY RESISTANCE TO RADIATION EXPOSURE | 2009 |
|
RU2411527C1 |
METHOD FOR PRESORTING OF CMOS CHIPS MADE ON SILICON-ON-INSULATOR STRUCTURES, BY RESISTANCE TO RADIATION EFFECT | 2007 |
|
RU2364880C1 |
METHOD FOR SELECTING PLATES WITH RADIATION-RESISTANT MOS INTEGRATED CIRCUITS | 1995 |
|
RU2082178C1 |
METHOD TO SORT CMOS MICROCIRCUIT CHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES BY RADIATION RESISTANCE | 2010 |
|
RU2444742C1 |
METHOD FOR GRADING BATCH OF INTEGRAL MEMORY CIRCUITS WITH RESPECT TO THEIR RADIATION STABILITY | 1998 |
|
RU2149417C1 |
METHOD FOR DIVIDING INTEGRATION MICROCHIPS ON BASIS OF RADIATION RESISTANCE AND RELIABILITY | 2006 |
|
RU2311654C2 |
Authors
Dates
2001-06-10—Published
1999-04-05—Filed