FIELD: technological processes.
SUBSTANCE: invention relates to high reliability and quality of operation of a batch of semiconductor monolithic and hybrid integrated circuits (IC). Essence: IC is subject to artificial aging, as a result of which degradation of parameters of materials and structure of IC and change of their informative parameters takes place. Based on patterns of degradation of IC information-bearing parameters under action of destabilizing operation factors, functions of changing information-bearing parameters in time are determined, building dependencies of probability of execution of specified functions of IC from values of information-bearing parameters, constructing a function of probability density of information-bearing parameters taking into account technological errors of parameters of the IC structure, constructing a probability density function of information-bearing parameters taking into account technological errors of parameters of the design of IC and probability of performing given functions. Probability of performing the given functions with the IC batch at the initial moment in time is obtained, and the probability of performing the given functions by the batch of the IC during a given time is obtained. Nominal informative parameters of the integrated circuit are corrected based on the criterion of the maximum probability of performing given functions by the IC batch during a given operating time and new nominal parameters of the structure of the IC are synthesized, providing optimal by the criterion of maximum probability of the given functions performance by the IC batch during the specified operating time nominal values of the informative parameters.
EFFECT: high reliability and quality of operation of batch of hybrid and monolithic integrated circuits.
3 cl, 6 dwg
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Authors
Dates
2019-04-16—Published
2018-06-21—Filed