METHOD FOR INCREASING CURRENT DENSITY AND DEGRADATION RESISTANCE OF AUTO-EMISSION CODES ON SILICON PLATES Russian patent published in 2018 - IPC H01J1/30 H01J19/00 H01J9/02 

Abstract RU 2654522 C1

FIELD: electronics.

SUBSTANCE: invention relates to electronic engineering and can be used in the manufacture of light-indicating technology products and emission electronics based on field emission of a matrix of multi-point carbon emitters on single-crystal silicon plates. Production of a matrix of a multi-tip auto-emission cathode is performed on a single-crystal silicon plate of the hole-type conductivity in the plasma of a microwave gas discharge by precipitation from vapors of carbonaceous substances, for example ethanol, carbon coatings on silicon columnar nanostructures that are up to several tens of nanometers in height. Emission layers with a low transverse electric conductivity are used to increase the densities of field emission currents.

EFFECT: technical result is an increase in the stability and efficiency of field emission.

1 cl, 2 dwg

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Authors

Krasnikov Gennadij Yakovlevich

Gornev Evgenij Sergeevich

Orlov Sergej Nikolaevich

Yafarov Ravil Kyashshafovich

Yafarov Andrej Ravilevich

Timoshenkov Sergej Petrovich

Timoshenkov Valerij Petrovich

Dates

2018-05-21Published

2016-06-22Filed