FIELD: instrument engineering.
SUBSTANCE: method and equipment for manufacturing a thin-film transistor substrate are provided. In the production method, after forming a gate and a gate dielectric of the thin film transistor, a semiconductor layer and a first protective layer are successively applied. After forming the first protective layer, the first protective layer formed is used as a mask for forming the semiconductor layer for forming a semiconductor channel of the thin film transistor.
EFFECT: in accordance with the solution described above, the invention can reduce the number of masks and is therefore useful for cost reduction.
10 cl, 9 dwg
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