FIELD: physics.
SUBSTANCE: magnetic memory comprises an array of cells including a plurality of memory cells disposed along the first and second directions, the array of cells including a first region and a second region around the first region, and each memory cell includes an element with a magnetoresistive effect in the quality of the memory element; and a reading circuit to read data from a memory location selected based on the address signal from the number of memory cells, wherein the reading circuit selects one definition layer from the plurality of determination levels based on a region of the number of the first and second regions in which the selected memory location is located and uses the selected detection level to read data from the selected memory location.
EFFECT: increase the reliability of magnetic memory.
20 cl, 11 dwg
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