DEVICE FOR CONTACT PHOTOLITHOGRAPHY ON SEMICONDUCTOR WAFER WITH BASE CUT Russian patent published in 2018 - IPC H01L21/31 

FIELD: technological processes.

SUBSTANCE: use for contact photolithography on a semiconductor wafer with a base cut. Essence of the invention lies in the fact that the device for contact photolithography on a semiconductor wafer with a base slice contains a table with a landing slot for accommodating a semiconductor wafer, an illuminator, a microscope for visual control of alignment, the photomask and the pipeline associated with the air pumping means, additional photomasks of the upper and lower levels are added, and the table is made in the form of a support plate, in which there is an opening for illuminating the back side of the semiconductor plate, the landing nest consists of a low-level photomask with a sealing frame, provided with openings for a vacuum suction device, as well as three mounting elements for fixing the location of the semiconductor wafer, that are located in the recesses of the top-level photomask; in addition, three pairs of mechanically and electrically contacted mounting elements are inserted, mounted on the top-level photomask and on the base plate, that serve to fix the location of the top-level photomask, and the lower level photo mask, the side walls of the hole in the base plate, the dividing wall and the lower wall that is transparent to the exposure radiation form cavities for the suction pad of the semiconductor wafer and the upper photo mask.

EFFECT: providing opportunities to improve the performance of photolithography operations, as well as the ability to perform combined photolithography of the front and back sides of a semiconductor wafer.

1 cl, 1 dwg