FIELD: semiconductor technology. SUBSTANCE: method involves double step vacuum coating of blend having Cadmium selenide. The first step involves coating in quasi-closed volume of blend during 1,5-2 hours. The second step involves coating blend by magnetron under substrate temperature 60-80 C during 45-75 minutes. Content of blend for the first step has 70-80 percents of Cadmium selenide, 12- 26 percents of Cadmium telluride, 4-8 percents of Cadmium chloride. Content of blend for the second step has 95-97 percents of Cadmium sulfide, 3-5 percents of sulfate of copper. Method provides possibility to manufacture photo sensitive conducting layers having factor of resistance variation ≈2·108 and break-down voltage 2·105 В/cm.. EFFECT: increased duration life of visualization unit. 2 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR MANUFACTURING FLEXIBLE SOLAR CELLS WITH CdTe ABSORBING LAYER ON POLYMER FILM | 2023 |
|
RU2806180C1 |
METHOD FOR LOW-TEMPERATURE ACTIVATION OF PHOTOCONDUCTIVITY OF CADMIUM TELLURIDE FILMS | 2018 |
|
RU2699033C1 |
SOLAR TO ELECTRIC ENERGY CONVERTER | 0 |
|
SU689483A1 |
METHOD OF MANUFACTURING BASE LAYERS OF FLEXIBLE PHOTO-ELECTRICAL CONVERTERS BASED ON CDTE IN QUASI-CLOSED VOLUME | 2017 |
|
RU2675403C1 |
SEMICONDUCTOR GAS SENSOR FOR OXYGEN TRACE SUBSTANCES | 2015 |
|
RU2610349C1 |
METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
PRODUCTION OF PHOTO CONDUCTING RADIATION-RESISTANT STRUCTURES | 2013 |
|
RU2546119C2 |
METHOD OF EPITAXIAL GROWTH OF INTERFACE BETWEEN MATERIALS FROM III-V GROUPS AND SILICON PLATE, WHICH PROVIDES NEUTRALIZATION OF RESIDUAL DEFORMATIONS | 2015 |
|
RU2696352C2 |
PROCESS OF PHOTOCONDUCTIVE RADIATION-PROOF FILM MANUFACTURING | 2006 |
|
RU2328059C1 |
METHOD OF PASSIVATING SURFACE OF CADMIUM-MERCURY TELLURIDE | 2015 |
|
RU2611211C1 |
Authors
Dates
1995-05-27—Published
1986-12-12—Filed