METHOD OF CdTe/CdS HETEROJUNCTION SYNTHESIS FROM ELEMENTARY HIGH-PURITY PRECURSORS FOR THIN-FILM SOLAR CELLS Russian patent published in 2024 - IPC H01L31/18 H01L21/203 

FIELD: power engineering.

SUBSTANCE: invention relates to solar power engineering and can be used in making thin-film solar cells with a cadmium tellurium/cadmium sulphur (CdTe/CdS) heterojunction. Method of producing a CdTe/CdS heterojunction involves loading initial substances: elementary cadmium, tellurium and sulphur, heating in a furnace to temperatures of 275 °C, 430 °C and 120 °C, respectively, to create sufficient pressure of saturated steam, which enters the plasma-chemical reactor, where reaction of interaction of cadmium, tellurium and sulphur takes place in reaction zone of said reactor by means of high-frequency plasma discharge in conditions of nonequilibrium inductively coupled plasma at low pressure, wherein the catalyst used is non-equilibrium inductively coupled plasma, which increases the growth rate of the film and increases the size of crystallites, and contributes to the creation of a quasi-homojunction.

EFFECT: main advantage of the invention is obtaining large grains and increasing the growth rate of films used as the main layer for thin-film solar cells.

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