FIELD: solar cells.
SUBSTANCE: technology for manufacturing flexible thin-film solar cells with a heterojunction in the Mo/MoOx//CdTe//CdS//i-ZnO//ITO structure. At the first stage, a polyimide film with a tensile strength of 170-250 MPa is used under standard conditions for a film thickness of 38-50 mcm. The film is pre-annealed in vacuum at temperature T≈ +250°C in a vacuum oven for at least 1 hour. Then a molybdenum coating is applied to it on both sides to reduce its deformation. In this case, a layer of MoOx is applied to the working surface of Mo using the magnetron sputtering method, by replacing the working gas in the magnetron chamber from argon to oxygen. At the second stage, an absorbing layer - cadmium telluride - is applied using the PVD method. In this case, the size of the evaporator is less than the distance between the substrate and the evaporator and can be considered a point size. At the third stage, photoconductivity of the absorbing layer is activated, in which a NaF layer is applied before applying the activator layer (CdCb). At the fourth stage, a CdS buffer layer is applied. ZnO was then deposited onto the samples. After this, annealing was carried out at T=450°C for at least 120 minutes in an inert atmosphere. A layer of ITO is then applied.
EFFECT: manufacture of flexible thin-film solar cells with a CdTe absorbing layer; reduced deformation and increase the thermal stability of the solar cell.
1 cl, 5 dwg
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Authors
Dates
2023-10-27—Published
2023-05-03—Filed