POWER SEMICONDUCTOR MODULE WITH IMPROVED STRUCTURE OF CONTACT CONNECTORS FOR WELDING Russian patent published in 2018 - IPC H01L23/49 

FIELD: instrument engineering.

SUBSTANCE: use: for the manufacture of power semiconductor module. Invention consists in the fact that the power module has: at least one substrate; at least one power semiconductor placed on the substrate, which has a contact area on its side facing away from the substrate; placed on a substrate, next to the power semiconductor, if necessary segmented pad of the load potential; plurality of contact connectors for parallel conductive connection of the contact pad with the platform of the potential load, each contact connector has at least one first contact leg on the platform of the potential load and has many second contact legs on the contact pad, and each contact connector has at least one end on the contact area, the plurality of contact connectors are subdivided into at least two groups of a plurality of contact connectors with the same number of contact legs, and the second pins of each contact connector of one group are placed exclusively in one segment or area of the contact pad, given by the surface area of the contact pad, and groups are distinguished by the fact that their first contact feet are placed on a different, but preferably consistent within each group distance to the power semiconductor at the potential load site.

EFFECT: technical result: providing the possibility of improving the maximum allowable load current contact connector.

14 cl, 6 dwg