COMPOSITION OF POLISHING ETCHING AGENT FOR CHEMICAL-MECHANICAL POLISHING OF CADMIUM-ZINC TELLURIDE Russian patent published in 2016 - IPC C23F1/30 C30B33/10 

Abstract RU 2574459 C1

FIELD: chemistry.

SUBSTANCE: composition of polishing etching agent includes the following components: 7 volume parts of sulphuric acid (98%), 1 volume part of hydrogen peroxide (30%), 1 volume part of water, 3.5 volume parts of ethyleneglycol.

EFFECT: increase of polishing speed at specified speed of disk revolution.

2 dwg, 1 tbl

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RU 2 574 459 C1

Authors

Kashuba Aleksej Sergeevich

Lakmanova Medina Refatovna

Pogozheva Anna Vladimirovna

Zakharov Ehl'Mar Fazievich

Dates

2016-02-10Published

2014-11-24Filed