FIELD: chemistry.
SUBSTANCE: composition includes sulfuric acid, hydrogen peroxide, water, ethylene glycol and glycerin, with the following ratio of components, volume fractions: sulfuric acid (98%) - 7, hydrogen peroxide (30%) - 1, water - 1, ethylene glycol - 3,5, glycerol - 3.5.
EFFECT: invention provides polishing etching of cadmium-zinc telluride with the formation of a homogeneous surface with an average roughness of not more than 7 nm.
3 dwg
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