FIELD: chemistry.
SUBSTANCE: method for precision doping of thin films on a gallium arsenide surface, which includes treating the surface of a gallium arsenide plate with concentrated hydrofluoric acid for 10 minutes, washing the plate with distilled water, drying on air, oxidising the plate in the presence of an active chemical stimulant - lead (II) oxide - at 530°C, oxygen flow rate of 30 l/h for 40 minutes; according to the invention, oxidation is carried out in the presence of yttrium (III) oxide, the quantitative content of which varies from 0 to 100 mol% of the lead (II) oxide.
EFFECT: forming a thin oxide film on a gallium arsenide surface, said film containing a precision-controlled amount of dopants, using simple equipment with a rapid technique.
1 dwg
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