FIELD: technological processes.
SUBSTANCE: invention relates to a method for laser scribing a semiconductor preform. Create a rift along the scribing path, which goes deep into the volume of workpiece (6). Thermal stresses are induced by applying at least two processing (ultrashort pulse) pulsed rays (7) containing at least primary and secondary pulses. Primary pulses are used to create a heat accumulation zone, which provides a more efficient absorption of secondary pulses, which create a heat gradient sufficient to obtain the mechanical damage necessary for the mechanical separation of workpiece (6) into separate parts.
EFFECT: invention can be used for efficient and fast separation of semiconductor devices made on solid and solid substrates (6).
9 cl, 6 dwg
