FIELD: laser engineering.
SUBSTANCE: invention relates to a laser processing method for separating semiconductor devices, made on same substrate (6), as well as for the separation of rigid and solid substrates (6) of large thickness. Method comprises the step of setting up pulsed laser beam (1) using focusing unit (1) the way to form a wedge-shaped region – beam convergence, in particular, to obtain in the internal structure of workpiece (6) a threshold value of the energy density (energy distribution) of optical damage to the workpiece material. During this stage, a weakened area is formed (needle-shaped). Method comprises the step of forming a series of such damaged structures (8, 11) located along a predetermined breaking line by moving workpiece (6) relative to the condensation point of laser beam (1).
EFFECT: separation of semiconductor devices made on the same substrate, as well as the separation of hard and solid substrates of large thickness.
16 cl, 9 dwg, 3 ex
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