METHOD OF MANUFACTURING DEEP-GRADE STRUCTURES IN SILICON PLATE Russian patent published in 2019 - IPC H01L21/308 

FIELD: instrument engineering.

SUBSTANCE: invention relates to instrumentation, specifically to methods for manufacturing silicon sensitive elements of micromechanical gyroscopes and accelerometers. Technical result is achieved by creating a method of manufacturing deep-profiled structures in a silicon wafer, in which after forming a lithography mask for etching on one side of the substrate, dry etching through the mask is carried out to a depth of 90–95 % of the thickness of the wafer, then the mask is removed, a continuous layer of silicon oxide is formed on the etched side of the plate, after which anisotropic etching is performed on the back side of the plate to a depth of 15–20 % of thickness and the layer of silicon oxide is removed.

EFFECT: improving the accuracy of micromechanical gyroscopes and accelerometers.

1 cl, 5 dwg