METHOD TO MAKE INTEGRAL HIGH-Q SILICON MICROMECHANICAL RESONATOR Russian patent published in 2011 - IPC H03H3/07 H03H9/15 

FIELD: electricity.

SUBSTANCE: method to make an integral high-Q silicon micromechanical resonator includes formation of dead holes in a single-crystal silicon substrate at the side opposite to the working layer of a SOI plate, and those holes reach to the working layer of the SOI plate, a resonator structure is also formed in the working layer of the SOI plate, which is connected with sections in the form of solid areas of single-crystal silicon, which cover dead holes in the single-crystal silicon substrate, a sacrificial layer is removed from under the resonator structure, the SOI plate is connected in high vacuum with a dielectric plate, having a groove arranged above the resonator structure, metal contact sites are formed on the open side of sections of single-crystal silicon that cover dead holes in the single-crystal silicon substrate, and the SOI plate and the dielectric plate are separated into crystals.

EFFECT: reduction of parasite capacitance of resonator contacts, increased sensitivity of the resonator due to reduction of a parasite signal and improved manufacturability.

3 cl, 8 dwg