FIELD: calculating; counting.
SUBSTANCE: invention relates to the computer equipment. Memory device with resistance variation contains a semiconductor substrate; provided on semiconductor substrate transistor with control output, first output and second output; a first insulating layer covering the transistor and comprising a first material; a second insulating layer provided on the first insulating layer and comprising a second material other than the first material; a third insulating layer provided on the second insulating layer and comprising a first material; a first contact rod penetrating the first insulating layer and connected to the first terminal; first and second conductive lines; resistance change element provided in first insulating layer and connected between second terminal and second conductive line; a second contact rod provided in the first insulating layer and connected between the resistance change element and the second conductive line; and a third contact rod provided in the first insulating layer and connected between the resistance change element and the second terminal.
EFFECT: technical result consists in prevention of reading and writing errors.
5 cl, 40 dwg
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