SYSTEM AND METHOD FOR RESISTANCE BASED MEMORY CIRCUIT PARAMETER ADJUSTMENT Russian patent published in 2012 - IPC G06F17/50 

Abstract RU 2465641 C2

FIELD: information technology.

SUBSTANCE: method of determining a set of parameters of a resistance based memory circuit involves selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further involves performing an iterative methodology to adjust at least one circuit parameter of a read amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired read amplifier margin value without changing the first parameter or the second parameter.

EFFECT: high efficiency of improving boundaries of the read amplifier.

41 cl, 24 dwg

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RU 2 465 641 C2

Authors

Dzung Seong-Ook

Kim Dzi-Su

Song Dzi-Khvan

Kang Seung Kh.

Joon Sej Seung

Dates

2012-10-27Published

2009-03-31Filed