IMPROVED SEMICONDUCTOR DEVICE WITH THE SCHOTTKY DIODE Russian patent published in 2019 - IPC H01L29/872 

FIELD: electrical equipment.

SUBSTANCE: semiconductor device (12) with a Schottky diode, containing the guarding annular structure, the epitaxial layer (4) and the epitaxial substrate (7). Diode has a diffusion region (31) of the second type of conductivity, which forms the smooth np-junction with the first type of conductivity simultaneous diffusion more highly doped layer concentration gradient. Outside concentrically with a diffusion region (31) of the second type of conductivity, the guarding ring (32) is located in such a way, that the lateral distance between the guarding ring (32) and the diffusion region (31) of the second type of conductivity is larger than the total thickness of the layers obtained from the thickness of the epitaxial layer (4) of continuous doping and the layer thickness of the gradient region (6).

EFFECT: invention ensures obtaining of device with the Schottky diode, which has a higher current density and reduced residual currents in the locking mode, is inexpensive to manufacturing and compact.

7 cl, 11 dwg