FIELD: physics.
SUBSTANCE: proposed photodetection device, in which, on the top view, the first conductivity type semiconductor region overlaps at least a portion of the third semiconductor region, second semiconductor region overlaps at least part of fourth semiconductor region of second conductivity type, potential value of the third semiconductor region with respect to electric charge of the first conductivity type is less than the potential value of the fourth semiconductor region, and the difference between the value of the potential of the first semiconductor region and the value of the potential of the third semiconductor region is greater than the difference between the value of the potential of the second semiconductor region and the value of the potential of the fourth semiconductor region.
EFFECT: invention provides high efficiency of photodetection.
20 cl, 20 dwg
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