FIELD: physics.
SUBSTANCE: photoelectric conversion device includes a semiconductor substrate having one main surface including the depressed portions, and the insulating bodies in the depressed portions. Semiconductor substrate includes photoelectric conversion elements, each of which includes a first semiconductor region of the first conductivity type, second semiconductor region of the second conductivity type and the third semiconductor region of the second conductivity type, which has at least a portion located closer to the main surface relative to the second semiconductor region. Second semiconductor region has an information charge polarity. Second semiconductor region is in contact with the first and third semiconductor regions. Information charge paths are located between the recessed areas in a cross section perpendicular to the main surface. At least one of the second and third semiconductor areas are positioned in directions from at least two information charge paths.
EFFECT: invention provides improved photoelectric conversion sensitivity by improving efficiency.
36 cl, 23 dwg
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