METHOD OF PRODUCING PHOTOVOLTAIC ELEMENTS USING A PRECURSOR FOR LIQUID-PHASE APPLICATION OF P-TYPE SEMICONDUCTOR LAYERS Russian patent published in 2019 - IPC H01L51/48 

FIELD: chemical or physical processes.

SUBSTANCE: invention relates to production of photovoltaic converters. According to the invention, a method of making photovoltaic (PVE) elements using a precursor for liquid-phase application of p-type semiconductor layers, involving production of precursor [Cu(NH₃)₄](OH)₂ by dissolving Cu(OH)₂ in a saturated solution of ammonia in ethylene glycol with concentrations from 5 to 100 mg/ml, heating of the substrate, formation of a layer of non-stoichiometric copper oxide by liquid-phase solution application by rotation of the substrate (centrifugation) on a layer of indium oxide doped with fluorine, on glass in rotation mode, from 2,500 to 3,500 rpm for 30–90 seconds, followed by annealing at temperature of 150–300 °C for 1 hour, depositing a perovskite layer by centrifuging the substrate, applying similarly on the perovskite layer of a semiconducting organic layer of methyl ester of phenyl-C61-butyric acid, and then batocuproine, thermoresistive sputtering of conducting contacts based on silver.

EFFECT: invention enables to vary the thickness of the obtained PVE layer by changing the concentration of the copper-containing precursor, as well as reducing the temperature of obtaining a semiconductor hole-transport layer, which makes it possible to use them within the framework of such technological processes as jet printing on flexible substrates and application by rotation of the substrate.

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