METHOD OF ION-PLASMA PRODUCTION OF NANOSTRUCTURES ON TUNGSTEN SURFACE Russian patent published in 2019 - IPC B82B3/00 C23C14/16 C23C14/44 C23C14/46 

FIELD: technological processes.

SUBSTANCE: invention relates to a method of ion-plasma production of nanostructures on the surface of tungsten. First, surface of sample is processed in plasma of induction high-frequency discharge in argon at pulsed negative bias voltage on article with value higher than 100 V with frequency up to 100 kHz and filling factor up to 100 %. Vacuum is created and helium working gas is added, after that sample surface is heated to 1,000 K in plasma of induction high-frequency discharge at floating displacement potential on sample. Then, a pulsed negative displacement potential is sent to the sample relative to a grounded vacuum chamber with a value higher than 30 V, a frequency of up to 100 kHz and a filling factor of up to 100 % and performing ion-plasma treatment of the article with helium ions in the high-frequency discharge induction plasma, for which vacuum is generated, feeding helium working gas into the vacuum chamber, supplying the negative bias voltage to the article relative to the grounded working chamber with value greater than 30 V, treatment in the plasma of the surface of the sample with a stream of helium ions with energy greater than 30 eV at sample temperature of 1,000–2,000 K with a minimum radiation dose of ~10²⁴ m^-2. After that, argon is supplied into vacuum chamber to pressure not higher than 10⁵ Pa and cooling the sample to room temperature in an argon atmosphere.

EFFECT: as a result, uniformly distributed nanostructures are obtained over the entire surface of the treated article from tungsten without pre-polishing the sample, having a high light absorption coefficient in the visible, ultraviolet and near infrared wavelength ranges, which enables their use in nanotechnology and nanomaterials and creation of optical absorbers.

1 cl, 4 dwg, 2 ex