FIELD: physics.
SUBSTANCE: use: semiconductor electronics. Powerful high-frequency and microwave transistor structure includes collector regions, emitter and base, contact metallization and ballast resistor connected by one edge to contact metallization of emitter, and by other edge - to contact pad for connection of emitter output. Ballast resistor is multilayer, layers materials have different resistivity and melting point, increasing from upper layer to lower one relative to semiconductor substrate. If the temperature exceeds a certain critical value, the invention ensures reduction of power released by active areas due to stepwise increase in resistance of the ballast resistor due to evaporation of its upper layer and input resistance of the structure as a whole.
EFFECT: technical result is high failure resistance of transistor structure due to increasing its resistance to increase in temperature of active areas of structure due to deviation of characteristics of amplification mode from standard values, for example, in mismatch of power amplifier end cascade with load.
1 cl, 2 dwg
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