FIELD: technological processes.
SUBSTANCE: invention can be used to amplify electroluminescence of semiconductors. Essence of the invention is that a zinc oxide layer with maximum thickness of 200 nm, doped with aluminum ions in concentration of 3 to 4 mol percent and with layers of silver nanoparticles with maximum concentration of 1.25⋅1016 per cm3, centres of nanoparticles are at distance of 110–130 nm from each other and form a three-dimensional lattice, nanoparticles have size of 38–42 nm, wherein amplification wavelength depends on molar concentration of aluminum n in ratio of wavelength in nanometers λ=530+40⋅(n-3).
EFFECT: enabling amplification of electroluminescence of semiconductors emitting at wavelengths of 530–570 nm.
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Authors
Dates
2019-09-26—Published
2018-12-25—Filed