PHOTOVOLTAIC DEVICE Russian patent published in 2020 - IPC H01L31/216 H01L31/54 B82Y30/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to coating compositions for semiconductor materials. Photovoltaic device comprises a p-type silicon layer with a first electrode connected, a n-type conductivity layer which is a metal oxide, to which a second electrode and nanostructured silver particles are connected, wherein according to the invention, the p-type conductivity layer is made from amorphous silicon, between the metal oxide layer to which the second electrode is connected and the p-type conductivity layer, an amorphous silicon layer of n-type conductivity is located, nanostructured silver particles with size of 30–40 nm are implanted at distance of 45–50 nm from each other with maximum concentration of not more than 2·10¹⁵ per cm³ into oxide layer of metal with thickness from 80 to 200 nm, in form of zinc oxide alloyed with aluminum in percentage ratio of 0.5–1.5 mol%.

EFFECT: invention solves the task of increasing efficiency of radiation capture by solar battery at wavelengths 440±10 nm and in range from 900 to 1,700 nm.

1 cl, 2 dwg