FIELD: technological processes.
SUBSTANCE: use for amplification of electroluminescence of semiconductors. Substance of invention consists in the fact that zinc oxide layer doped with aluminum ions in concentration of 1.5–3.5 mol% with thickness from 100 to 200 nm and layers of nanoparticles with size of 38–42 nm with maximum concentration of 1.25⋅1016 per cm3, nanoparticles are nanoparticles of gold, and their centres are located at distance of 70–120 nm from each other with formation of three-dimensional lattice.
EFFECT: possibility of amplifying electroluminescence of semiconductors emitting at wavelengths of 590–630 nm.
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Authors
Dates
2019-09-26—Published
2018-12-25—Filed