FIELD: electrical engineering.
SUBSTANCE: invention relates to coating compositions of semiconductor materials and solves the problem of amplifying the electroluminescence of semiconductors at a wavelength of 450 nm. Transparent conductive oxide contains a zinc oxide layer with a maximum thickness of 200 nm doped with aluminum ions in a concentration of 1 to 3 mol percent and layers of silver nanoparticles 30–40 nm in size and a maximum concentration of 1.25⋅1016 per cm3.
EFFECT: invention provides amplification of the electroluminescence of semiconductors emitting at a wavelength of 450 nm.
1 cl
| Title | Year | Author | Number |
|---|---|---|---|
| TRANSPARENT CONDUCTIVE OXIDE | 2018 |
|
RU2701467C1 |
| TRANSPARENT CONDUCTIVE OXIDE WITH GOLD NANOPARTICLES | 2018 |
|
RU2701468C1 |
| PHOTOVOLTAIC DEVICE | 2019 |
|
RU2728247C1 |
| LIGHT-EMITTING SEMICONDUCTOR DEVICE BASED ON ELEMENTS OF II-VI GROUPS | 2013 |
|
RU2639605C2 |
| MULTIPLE-JUNCTION PHOTOELECTRIC DEVICE | 2011 |
|
RU2554290C2 |
| P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING R-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2014 |
|
RU2660407C2 |
| DEVICE FOR CONVERTING SOLAR ENERGY TO ELECTRICAL ENERGY | 2009 |
|
RU2516242C2 |
| DIPOLAR NANOLASER ARRAY | 2013 |
|
RU2569050C2 |
| METHOD FOR PRODUCTION OF NITRIDE LIGHT-EMITTING DIODE | 2019 |
|
RU2721166C1 |
| FRONT CONTACT WITH ADJACENT INTERMEDIATE LAYER(S) FOR USE IN PHOTOELECTRIC DEVICES AND METHOD OF MAKING SAID CONTACT | 2007 |
|
RU2423755C2 |
