INJECTION LASER Russian patent published in 2001 - IPC

FIELD: quantum electronics; semiconductor injection sources with single-mode and single-frequency radiation. SUBSTANCE: proposed injection laser has heterostructure with preset level of background dope between limiting doped sublayers of higher optical limitation closest to active layer; ratio of hole concentration P on p-side to electron concentration N on n-side in same limiting sublayers, namely, P/N ratio, is chosen higher than unity. Volume charge boundaries of p-i-n heterojunction are located in mentioned limiting sublayers. Such design provides for raising radiation power of single-frequency radiators and for stabilizing temperature characteristics. EFFECT: enhanced efficiency and reliability. 24 cl, 7 dwg, 1 tbl