INJECTION LASER MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: heterostructure based injection lasers. SUBSTANCE: process includes growing of first confining layer incorporating doped sublayer of first polarity of conductivity whose composition ensures maximal optical beam confinement, active layer, and second confining layer incorporating doped sublayer of second polarity of conductivity whose composition ensures maximal optical beam confinement. Doped confining sublayers of maximal optical confinement closest to active layer are doped so as to ensure that ratio of hole concentration in p sublayer of maximal optical confinement on p side to electron concentration in n sublayer of maximal optical confinement on n side (p/n ratio) were higher than unity. Background dope level is ensured between doped confining sublayers of maximal optical confinement and also in active layer. Volume charge boundaries of p-i-n heterojunction are arranged in doped confining sublayers of maximal optical confinement. Laser produced in the process has higher output radiation power in single-mode and single-frequency operation. EFFECT: enhanced temperature stability and operating reliability of laser. 26 cl, 7 dwg, 1 tbl